? 2010 ixys corporation, all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 200 v v dgr t j = 25 c to 150 c, r gs = 1m 200 v v gss continuous 20 v v gsm transient 30 v i d25 t c = 25 c 80 a i dm t c = 25 c, pulse width limited by t jm 340 a i a t c = 25 c 80 a e as t c = 25 c 2.5 j p d t c = 25 c 520 w t j -55 to +150 c t jm +150 c t stg -55 to +150 c t l 1.6mm (0.063in) from case for 10s 300 c t sold plastic body for 10s 260 c m d mounting torque (to-247) 1.13/10 nm/lb.in. weight to-268 4 g to-247 6 g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 250 a 200 v v gs(th) v ds = v gs , i d = 250 a 2.0 4.0 v i gss v gs = 20v, v ds = 0v 100 na i dss v ds = v dss , v gs = 0v 25 a t j = 125 c 250 a r ds(on) v gs = 10v, i d = 0.5 ? i d25 , note 1 32 m linear tm power mosfet w/ extended fbsoa ixtt80N20L ixth80N20L ds100294(11/10) v dss = 200v i d25 = 80a r ds(on) 32m advance technical information n-channel enhancement mode guaranteed fbsoa avalanche rated features z designed for linear operation z international standard packages z avalanche rated z guaranteed fbsoa at 75 c advantages z easy to mount z space savings z high power density applications z solid state circuit breakers z soft start controls z linear amplifiers z programmable loads z current regulators g = gate d = drain s = source tab = drain to-247 (ixth) g s d (tab) d to-268 (ixtt) s g d (tab)
ixys reserves the right to change limits, test conditions, and dimensions. ixtt80N20L ixth80N20L symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10v, i d = 0.5 ? i d25 , note 1 30 45 s c iss 6160 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 1170 pf c rss 520 pf t d(on) 29 ns t r 44 ns t d(off) 72 ns t f 29 ns q g(on) 180 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 30 nc q gd 95 nc r thjc 0.24 c/w r thcs to-247 0.21 c/w safe operating area specification characteristic values symbol test conditions min. typ. max. soa v ds = 200v, i d = 0.75a, t c = 75c, t p = 3s 150 w note 1. pulse test, t 300 s, duty cycle, d 2%. ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 r g = 2 (external) advance technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. ixys reserves the right to change limits, test conditions, and dimensions without notice. source-drain diode symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. i s v gs = 0v 80 a i sm repetitive, pulse width limited by t jm 320 a v sd i f = i s , v gs = 0v, note 1 1.5 v t rr 250 ns i f = i s , -di/dt = 100a/ s, v r = 100v, v gs = 0v e ? p to-247 outline 1 2 3 terminals: 1 - gate 2 - drain 3 - source dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc to-268 outline terminals: 1 - gate 2 - drain 3 - source 4 - drain
? 2010 ixys corporation, all rights reserved ixtt80N20L ixth80N20L fig. 1. output characteristics @ t j = 25oc 0 10 20 30 40 50 60 70 80 0 0.5 1 1.5 2 2.5 v ds - volts i d - amperes v gs = 10v 9v 8v 7 v 5 v 6 v fig. 2. extended output characteristics @ t j = 25oc 0 25 50 75 100 125 150 175 200 225 250 0 5 10 15 20 25 v ds - volts i d - amperes v gs = 10v 7 v 6 v 5 v 8 v 9 v fig. 3. output characteristics @ t j = 125oc 0 10 20 30 40 50 60 70 80 012345 v ds - volts i d - amperes v gs = 10v 9v 8v 5 v 7v 6v fig. 4. r ds(on) normalized to i d = 40a value vs. junction temperature 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 -50-25 0 255075100125150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 80a i d = 40a fig. 5. r ds(on) normalized to i d = 40a value vs. drain current 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 0 20 40 60 80 100 120 140 160 180 200 220 240 i d - amperes r ds(on) - normalized v gs = 10v t j = 125oc t j = 25oc fig. 6. maximum drain current vs. case temperature 0 10 20 30 40 50 60 70 80 90 -50-25 0 255075100125150 t c - degrees centigrade i d - amperes
ixys reserves the right to change limits, test conditions, and dimensions. ixtt80N20L ixth80N20L fig. 7. input admittance 0 10 20 30 40 50 60 70 80 90 100 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 8. transconductance 0 10 20 30 40 50 60 0 102030405060708090100 i d - amperes g f s - siemens t j = - 40oc 125oc 25oc fig. 9. forward voltage drop of intrinsic diode 0 40 80 120 160 200 240 0.40.50.60.70.80.91.01.11.21.31.41.5 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 20 40 60 80 100 120 140 160 180 200 q g - nanocoulombs v gs - volts v ds = 100v i d = 40a i g = 10ma fig. 11. capacitance 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. maximum transient thermal impedance 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w
? 2010 ixys corporation, all rights reserved ixys ref: t_80N20L(8x)10-29-10 ixtt80N20L ixth80N20L fig. 13. forward-bias safe operating area @ t c = 25oc 0.1 1 10 100 1000 1 10 100 1000 v ds - volts i d - amperes t j = 150oc t c = 25oc single pulse 25s 10ms 1ms r ds(on) limit 100ms dc 100s fig. 14. forward-bias safe operating area @ t c = 75oc 0.1 1 10 100 1000 1 10 100 1000 v ds - volts i d - amperes t j = 150oc t c = 75oc single pulse 25s 10ms 1ms r ds(on) limit 100ms dc 100s
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